半導体発光素子及びその製造方法

Semiconductor light emitting element and manufacturing method thereof

Abstract

【課題】 半導体発光素子の光取り出し効率を高めるとともに、当該半導体発光素子を形成する際の製造コストを低減する。 【解決手段】 素子本体を構成するn型GaN層13をサファイア基板11から剥離する際に、予めサファイア基板11の主面に形成された側面17をn型GaN層13の剥離面に転写する。これにより、発光層とされるInGaN層14から出射される光が素子内部で殆ど全反射されることがなく、素子の光取り出し効率を高めることができる。さらに、このような素子形成に用いたサファイア基板11は素子本体が剥離されることにより殆ど損傷をうけないことから、サファイア基板11を繰り返し素子形成に用いることが可能となる。 【選択図】 図1
<P>PROBLEM TO BE SOLVED: To increase light extraction efficiency in a semiconductor light emitting element and to reduce manufacturing costs when forming the semiconductor light emitting element. <P>SOLUTION: When an n-type GaN layer 13 for composing an element body is separated from a sapphire substrate 11, a side 17 formed on the main surface of the sapphire substrate 11 in advance is transferred to the separated surface of the n-type GaN layer 13, thus nearly preventing light emitted from an InGaN layer 14 that becomes a luminous layer from being entirely reflected inside the element and increasing the light extraction efficiency in the element. Additionally, the separation of the element body nearly prevents the sapphire substrate 11 used for such element formation from being damaged, thus repeatedly using the sapphire substrate 11 when forming the element. <P>COPYRIGHT: (C)2005,JPO&NCIPI

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