半導体集積回路の化学的機械的平坦化方法

Chemical mechanical planarization method for semiconductor integrated circuit

Abstract

<P>PROBLEM TO BE SOLVED: To perform low scratching, while keeping a high polishing speed and flatness. <P>SOLUTION: A conductive material film is polished through the use of a polishing pad composed of a composition, where particles made of a water-soluble resin are dispersed in a non-water-soluble cross-linking structural body made of cross-linking rubber or a cross-linked thermal curing resin; and a polishing solution contains inorganic/organic composite particles as a polishing solution. <P>COPYRIGHT: (C)2007,JPO&INPIT
【課題】 高い研磨速度、平坦性を保ちながら、低スクラッチを可能とする。 【解決手段】 橋ゴムもしくは架橋した熱硬化性樹脂からなる非水溶性架橋構造体中に水溶性樹脂よりなる粒子が分散された組成物よりなる研磨パッドと、研磨液として無機/有機複合粒子を含有する研磨液とを用いて導電性材料膜を研磨する。 【選択図】 なし

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    JP-2008302489-ADecember 18, 2008Kao Corp, 花王株式会社Manufacturing method for hard disk substrate
    WO-2009072405-A1June 11, 2009Jsr CorporationChemical mechanical polishing pad and chemical mechanical polishing method